RFD14N05SM9A
MOSFET de Potencia, Canal N, 50 V, 14 A, 0.1 ohm, TO-252AA, Montaje Superficial
¿Necesita más?
| Cantidad | Precio (sin IVA) |
|---|---|
| 100+ | 0,514 € |
| 500+ | 0,433 € |
| 1000+ | 0,355 € |
| 5000+ | 0,320 € |
Información del producto
Resumen del producto
The RFD14N05SM9A is a N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
- Temperature compensating PSPICE® model
- Peak current vs. pulse width curve
- UIS Rating curve
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
Canal N
50V
0.1ohm
TO-252AA
10V
48W
3Pins
-
-
Canal N
14A
0.1ohm
Montaje Superficial
4V
48W
175°C
-
Lead (27-Jun-2024)
Documentos técnicos (2)
Alternativas para RFD14N05SM9A
3 productos encontrados
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto