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Cantidad | Precio (sin IVA) |
---|---|
1+ | 2,860 € |
10+ | 2,640 € |
100+ | 1,520 € |
500+ | 1,350 € |
1000+ | 1,130 € |
5000+ | 1,070 € |
Información del producto
Resumen del producto
The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Fully avalanche rated
Especificaciones técnicas
Canal N
50A
TO-220AB
10V
150W
175°C
-
60V
0.028ohm
Orificio Pasante
4V
3Pins
-
Lead (07-Nov-2024)
Documentos técnicos (2)
Alternativas para IRFZ44RPBF
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:Mexico
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto