IRF740LCPBF
MOSFET de Potencia, Canal N, 400 V, 10 A, 0.55 ohm, TO-220AB, Orificio Pasante
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| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 3,170 € |
| 10+ | 2,440 € |
| 100+ | 1,480 € |
| 500+ | 1,300 € |
| 1000+ | 1,290 € |
| 5000+ | 1,260 € |
Información del producto
Resumen del producto
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
- Repetitive avalanche rated
- Reduced gate drive requirement
- 30V Enhanced VGS Rating
- Reduced CISS, COSS, CRSS
- Extremely high frequency operation
Especificaciones técnicas
Canal N
10A
TO-220AB
10V
125W
150°C
-
400V
0.55ohm
Orificio Pasante
4V
3Pins
-
Lead (21-Jan-2025)
Documentos técnicos (2)
Alternativas para IRF740LCPBF
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto