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| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 2,380 € |
| 10+ | 1,640 € |
| 100+ | 1,140 € |
| 500+ | 0,909 € |
| 1000+ | 0,900 € |
| 5000+ | 0,882 € |
Información del producto
Resumen del producto
The FDMS86101 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- 100% UIL tested
- 100% Rg tested
- Advance package and silicon combination for low RDS (ON) and high efficiency
Especificaciones técnicas
Canal N
60A
Power 56
10V
104W
150°C
-
Lead (27-Jun-2024)
100V
8000µohm
Montaje Superficial
2.9V
8Pins
-
MSL 1 - Ilimitado
Documentos técnicos (2)
Productos asociados
Se ha encontrado 1 producto
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto