FDL100N50F
MOSFET de Potencia, Canal N, 500 V, 100 A, 0.043 ohm, TO-264AA, Orificio Pasante
375 Ahora puede reservar el stock
| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 17,950 € |
| 5+ | 14,840 € |
| 10+ | 11,720 € |
| 50+ | 11,620 € |
| 100+ | 11,510 € |
| 250+ | 11,280 € |
Información del producto
Resumen del producto
The FDL100N50F is a 500V N-channel UniFET™ FRFET® MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
- Improved dv/dt capability
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
Canal N
100A
TO-264AA
10V
2.5kW
150°C
-
No SVHC (27-Jun-2024)
500V
0.043ohm
Orificio Pasante
5V
3Pins
-
-
Documentos técnicos (2)
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto