AUIRF7759L2TR

AUIRF7759L2TR is an automotive DirectFET® Power MOSFET. It combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.

• Drain-to-source voltage is 75V, gate-to-source voltage is ±20V
• Static drain-to-source on-resistance is 1.8mohm(typ)
• Optimized for automotive motor drive, DC-DC and other heavy load applications
• Exceptionally small footprint and low profile
• High power density
• Low parasitic parameters
• 175°C operating temperature
• Repetitive avalanche capability for robustness and reliability

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.