TS1GSK64V6H

The TS1GSK64V6H is a 512M x 8 DRAM high-speed low power memory DDR3 SO-DIMM use DDR3 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• 8-bit Pre-fetch
• Internal calibration through ZQ pin
• On die termination with ODT pin
• Serial presence detect with EEPROM
• Asynchronous reset