TBD62064AFAG(Z,EHZ

TBD62064AFAG(Z,EHZ is a BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.

• 4channel high current sink type DMOS transistor array
• High voltage is 50V (max, Ta = 25°C), high current is 1.5A/ch (max, Ta = 25°C)
• Input voltage range from 2.5 to 25V (output on, IOUT = 100mA or upper, VOUT = 2V, Ta = −40 to 85°C)
• COMMON pin voltage is 50V (Ta = -40 to 85°C, max)
• Clamp diode forward current is 1.25A (max, Ta = -40 to 85°C)
• Output leakage current is 1.0μA (max, VIN = 0V, VOUT = 50V, Ta = 25°C)
• Turn on delay is 1.0μs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
• Turn off delay is 1.7μs (typ, VOUT = 50V, RL = 42Kohm, CL = 15pF)
• P-SSOP24-0613-1.00-001 package, operating temperature range from -40 to 85°C

Notas

Please be careful about thermal conditions during use.