Información del producto
Resumen del producto
The NCP5901DR2G is a dual high performance MOSFET Gate Driver optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. It can drive up to 3nF load with a 25ns propagation delay and 20ns transition time. Adaptive anti-cross-conduction and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an under-voltage lockout function guarantees the outputs are low when supply voltage is low.
- Faster rise and fall times
- Adaptive anti-cross-conduction circuit
- Pre OV function
- ZCD detect
- Floating top driver accommodates boost voltages of up to 35V
- Output disable control turn-OFF both MOSFETs
- Under-voltage lockout
- Power saving operation under light load conditions
- Direct interface to NCP6151 and other compatible PWM controllers
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
2Channels
Lado Alto y Lado Bajo
8Pins
Montaje en superficie
-
4.5V
-10°C
16ns
-
-
MOSFET
SOIC
No Inversión
-
13.2V
125°C
11ns
-
Documentos técnicos (3)
Productos asociados
2 productos encontrados
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:Philippines
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto