¿Necesita más?
| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 1,030 € |
| 10+ | 0,768 € |
| 25+ | 0,718 € |
| 50+ | 0,669 € |
| 100+ | 0,619 € |
| 500+ | 0,490 € |
Información del producto
Resumen del producto
The FODM8801BR2 is a high-temperature Phototransistor Optocoupler utilizing leading-edge, process technology to achieve high operating temperature characteristics, up to 125°C. The OptoHiT™ series optocoupler consists of an aluminium gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor. It delivers high current transfer ratio at very low input current. The input-output isolation voltage (VISO) is rated at 3750VACRMS. It is suitable for ground-loop isolation, signal-noise isolation and DC-DC converter.
- Utilizing proprietary process technology to achieve high operating temperature up to 125°C
- Excellent CTR linearity at high temperature
- High isolation voltage
- Applicable to infrared ray reflow, 245°C
- <gt/>5mm Creepage and clearance distance
- 565V maximum working insulation voltage
- 6000V high allowable overvoltage
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
1 Canal
4Pins
3.75kV
75V
No SVHC (25-Jun-2025)
SSOP
20mA
130%
-
Documentos técnicos (2)
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:Thailand
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto