FDP20N50F
MOSFET de Potencia, Canal N, 500 V, 20 A, 0.22 ohm, TO-220, Orificio Pasante
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| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 3,520 € |
| 10+ | 2,650 € |
| 100+ | 1,510 € |
| 500+ | 1,400 € |
| 1000+ | 1,360 € |
Información del producto
Resumen del producto
The FDP20N50F is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dV/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- Improve dV/dt capability
- 100% avalanche tested
- 50nC typical low gate charge
- 27pF typical low Crss
Especificaciones técnicas
Canal N
20A
TO-220
10V
250W
150°C
-
500V
0.22ohm
Orificio Pasante
3V
3Pins
-
Lead (23-Jan-2024)
Documentos técnicos (2)
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto