¿Necesita más?
Cantidad | Precio (sin IVA) |
---|---|
1+ | 2,830 € |
10+ | 2,180 € |
25+ | 2,000 € |
50+ | 1,900 € |
100+ | 1,800 € |
250+ | 1,710 € |
500+ | 1,650 € |
1000+ | 1,570 € |
Información del producto
Resumen del producto
The IR2113STRPBF is a high voltage high speed power MOSFET and IGBT high and low-side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Especificaciones técnicas
2Channels
Lado Alto y Lado Bajo
16Pins
Montaje en superficie
2A
10V
-40°C
120ns
-
MSL 3 - 168 horas
-
IGBT, MOSFET
SOIC
No Inversión
2A
20V
125°C
94ns
-
No SVHC (21-Jan-2025)
Documentos técnicos (1)
Productos asociados
Se ha encontrado 1 producto
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:United States
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto