IKW25T120FKSA1
IGBT, Propósito General, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 Pines
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| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 6,510 € |
| 10+ | 4,780 € |
| 100+ | 4,490 € |
| 500+ | 4,000 € |
| 1000+ | 3,920 € |
Información del producto
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Resumen del producto
The IKW25T120 is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled HE diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 10µs Short-circuit withstand time
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
50A
190W
TO-247
150°C
-
No SVHC (23-Jan-2024)
2.2V
1.2kV
3Pins
Orificio Pasante
-
Documentos técnicos (4)
Productos asociados
3 productos encontrados
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:Germany
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto