IHW15N120R3FKSA1
IGBT, 30 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 Pines
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| Cantidad | Precio (sin IVA) |
|---|---|
| 1+ | 3,430 € |
| 10+ | 2,560 € |
| 100+ | 1,790 € |
| 500+ | 1,390 € |
| 1000+ | 1,360 € |
Información del producto
Resumen del producto
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Excellent quality
- Lower EMI filtering requirements
- JESD-022 Qualified
- Lowest power dissipation
- Better thermal management
- Surge current capability
- Highest reliability against peak currents
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
30A
254W
TO-247
175°C
-
No SVHC (21-Jan-2025)
1.7V
1.2kV
3Pins
Orificio Pasante
-
Documentos técnicos (4)
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:Philippines
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto