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Cantidad | Precio (sin IVA) |
---|---|
1+ | 12,780 € |
5+ | 12,400 € |
10+ | 12,020 € |
50+ | 11,030 € |
100+ | 10,030 € |
250+ | 9,040 € |
Información del producto
Resumen del producto
5th Generation thinQ!™ 1200V SiC schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are system efficiency improvement over Si diodes, enabling higher frequency / increased power density solutions, system size/cost savings due to reduced heatsink requirements and smaller magnetics, reduced EMI, highest efficiency across the entire load range, robust diode operation during surge events and high reliability.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Advertencias
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Especificaciones técnicas
thinQ
1.2kV
202nC
3 Pines
Agujero Pasante
No SVHC (21-Jan-2025)
Cátodo Común
110A
TO-247
175°C
-
Documentos técnicos (1)
Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:China
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto