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Cantidad | Precio (sin IVA) |
---|---|
1+ | 14,500 € |
10+ | 12,690 € |
25+ | 10,510 € |
50+ | 9,430 € |
100+ | 8,700 € |
Información del producto
Resumen del producto
The CY62157EV30LL-45ZSXI is a 8Mb high performance CMOS static RAM organized as 512K words by 16-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected. The input or output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, byte high enable and byte low enable are disabled or a write operation is active. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Pin compatible with CY62157DV30
- Ultra low standby power
- Ultra low active power
- Automatic power down when deselected
- CMOS for optimum speed/power
Especificaciones técnicas
SRAM asíncrona
512K x 16 bits
44Pins
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
8Mbit
TSOP
2.2V
3V
Montaje en superficie
85°C
MSL 3 - 168 horas
Documentos técnicos (1)
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Legislación y medioambiente
País donde se realizó la mayor parte del proceso de producciónPaís de origen:United States
País donde se realizó la mayor parte del proceso de producción
RoHS
RoHS
Certificado de conformidad del producto