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SI2305CDS-T1-GE3
Power MOSFET, P Channel, 8 V, 5.8 A, 0.028 ohm, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | € 0.110 |
| 9000+ | € 0.0996 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
€ 330.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2305CDS-T1-GE3
Order Code3879328
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.028ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008
Product traceability