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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBD241C
Order Code9801553
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current5A
Power Dissipation40W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
5A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Power Dissipation
40W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002