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NXH007F120M3F2PTHG
Silicon Carbide MOSFET, EliteSiC, M3S, Full Bridge, N Channel, 149 A, 1.2 kV, 0.01 ohm, PIM
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 157.120 |
| 5+ | € 152.140 |
| 10+ | € 147.150 |
Price for:Each
Minimum: 1
Multiple: 1
€ 157.12 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH007F120M3F2PTHG
Order Code4472917
Technical Datasheet
MOSFET Module ConfigurationFull Bridge
Channel TypeN Channel
Continuous Drain Current Id149A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.01ohm
Transistor Case StylePIM
No. of Pins34Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation353W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
149A
Drain Source On State Resistance
0.01ohm
No. of Pins
34Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
PIM
Rds(on) Test Voltage
18V
Power Dissipation
353W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability