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2N5551TA
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 2000+ | € 0.0562 |
| 6000+ | € 0.0467 |
Price for:Each (Supplied on Full Reel)
Minimum: 2000
Multiple: 2000
€ 112.40 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5551TA
Order Code4319677
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current600mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
160V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024
Product traceability