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NTBG020N090SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG020N090SC1
Order Code3367849
Product RangeEliteSiC Series
Technical Datasheet
746 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 24.530 |
| 10+ | € 19.880 |
| 50+ | € 19.250 |
| 100+ | € 16.900 |
| 250+ | € 16.850 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG020N090SC1
Order Code3367849
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id112A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.6V
Power Dissipation477W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
NTBG020N090SC1 is an EliteSiC silicon carbide (SiC) MOSFET that uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Applications include DC-DC converter, boost inverter, UPS.
- Low RDSon, ultra low gate charge (Qg tot), low output capacitance (Coss)
- 100% UIL tested
- Drain to source breakdown voltage is 900V min at VGS = 0V, ID = 1mA, TJ = 25°C
- Zero gate voltage drain current is 100µA max at VGS = 0V, TJ = 25°C
- Gate threshold voltage is 2.6V typ at VGS = VDS, ID = 20mA, TJ = 25°C
- Drain to source on resistance is 20mohm typ at VGS = 15V, ID = 60A, TJ = 25°C
- Total gate charge is 200nC typ at VGS = -5/15V, VDS = 720V, ID = 60A, TJ = 25°C
- 52ns rise time/13ns fall time at VGS = -5/15V, VDS = 720V, ID = 60A, RG = 2.5ohm, inductive load
- Operating junction and storage temperature range from -55 to +175°C
- D2PAK-7L package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
112A
Drain Source On State Resistance
0.02ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
15V
Power Dissipation
477W
Product Range
EliteSiC Series
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability