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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD127G
Order Code9557083
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd1.75W
DC Collector Current8A
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
The MJD127G is a 8A PNP bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
1.75W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
1000hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
8A
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Alternatives for MJD127G
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000665
Product traceability