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IXTA1N200P3HV.
MOSFET, N-CH, 2KV, 1A, TO-263HV
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26,517 In Stock
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Delivery Charge: € 18.00 once per order. 3 business days delivery for in stock items.
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 10.150 |
| 25+ | € 7.640 |
| 100+ | € 5.210 |
| 250+ | € 4.990 |
| 500+ | € 4.800 |
Price for:Each
Minimum: 1
Multiple: 1
€ 10.15 (ex VAT)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA1N200P3HV.
Order Code3771253
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds2kV
Continuous Drain Current Id1A
Drain Source On State Resistance40ohm
Transistor Case StyleTO-263HV
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
TO-263HV
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
2kV
Drain Source On State Resistance
40ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00205