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BFP840FESDH6327XTSA1
Bipolar - RF Transistor, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, TSFP
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | € 0.158 |
| 9000+ | € 0.150 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
€ 474.00 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP840FESDH6327XTSA1
Order Code4318942
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max2.25V
Transition Frequency85GHz
Power Dissipation75mW
Continuous Collector Current35mA
Transistor Case StyleTSFP
No. of Pins4Pins
DC Current Gain hFE Min150hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
85GHz
Continuous Collector Current
35mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage Max
2.25V
Power Dissipation
75mW
Transistor Case Style
TSFP
DC Current Gain hFE Min
150hFE
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003175
Product traceability