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SI4155DY-T1-GE3
Power MOSFET, P Channel, 30 V, 13.6 A, 0.0125 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4155DY-T1-GE3
Order Code4014702
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4155DY-T1-GE3
Order Code4014702
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id13.6A
Drain Source On State Resistance0.0125ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation4.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
13.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363
Product traceability