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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBDX53B
Order Code1015775
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Power Dissipation Pd60W
DC Collector Current8A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDX53B is a NPN complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
- Good hFE linearity
- High fT frequency
Applications
Industrial, Power Management, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
60W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
80V
DC Collector Current
8A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BDX53B
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability