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SCT3120AL GC11
Silicon Carbide MOSFET, Single, N Channel, 21 A, 650 V, 0.12 ohm, TO-247N
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No Longer Stocked
Product Information
ManufacturerROHM
Manufacturer Part NoSCT3120AL GC11
Order Code2947071
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id21A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.12ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation103W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.12ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation
103W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005