Print Page
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoSMBT35200MT1G
Order Code3617514
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP35V
Continuous Collector Current NPN-
Continuous Collector Current PNP2A
Power Dissipation NPN-
Power Dissipation PNP1W
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP100hFE
Transistor Case StyleTSOP
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP100MHz
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max PNP
35V
Continuous Collector Current PNP
2A
Power Dissipation PNP
1W
DC Current Gain hFE Min PNP
100hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
100MHz
Qualification
AEC-Q101
SVHC
No SVHC (15-Jan-2018)
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
Transistor Case Style
TSOP
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1