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Available to Order
Manufacturer Standard Lead Time: 12 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 1000+ | € 0.615 |
Price for:Tube of 1
Minimum: 1000
Multiple: 1000
€ 615.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF19N20C
Order Code3616251
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id19A
Drain Source On State Resistance0.14ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCLead (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.14ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
SVHC
Lead (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability