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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | € 1.120 |
| 250+ | € 1.090 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€ 117.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB55N10TM
Order Code2825191RL
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id55A
Drain Source On State Resistance0.021ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation155W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
155W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FQB55N10TM
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002051
Product traceability