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BDV64BG
Darlington Transistor, Darlington, PNP, 100 V, 125 W, 10 A, TO-247, 3 Pins
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 3.800 |
| 10+ | € 3.370 |
| 100+ | € 2.210 |
| 500+ | € 1.520 |
| 1000+ | € 1.410 |
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Multiple: 1
€ 3.80 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBDV64BG
Order Code9555943
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd125W
DC Collector Current10A
RF Transistor CaseTO-247
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BDV64BG is a -100V Silicon PNP Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
125W
RF Transistor Case
TO-247
DC Current Gain hFE
1000hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003856
Product traceability