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Quantity | Price (ex VAT) |
---|---|
1+ | € 7.260 |
10+ | € 5.180 |
100+ | € 4.030 |
500+ | € 3.020 |
1000+ | € 2.270 |
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Product Information
ManufacturerMULTICOMP PRO
Manufacturer Part NoBDV66B
Order Code9294430
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd125W
DC Collector Current16A
RF Transistor CaseTO-247
No. of Pins3Pins
DC Current Gain hFE-
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor.
- Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
- Collector-emitter saturation voltage(Vceo (sat) = 2V maximum at Ic = 10A)
- Collector-base voltage(Vcbo = 100V)
- Emitter-base voltage(Vebo = 5V)
- Multicomp Pro products are rated 4.6 out of 5 stars
- 12 month limited warranty *view Terms & Conditions for details
- 96% of customers would recommend to a friend
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
125W
RF Transistor Case
TO-247
DC Current Gain hFE
-
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
16A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006