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Quantity | Price (ex VAT) |
---|---|
1+ | € 44.260 |
5+ | € 38.790 |
10+ | € 33.310 |
50+ | € 32.660 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN100N50P
Order Code1427318
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds500V
Drain Source On State Resistance0.049ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN100N50P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, fast recovery diode and unclamped inductive switching (UIS) rated.
- Fast recovery diode
- Low inductance
- UL94V-0 Flammability rating
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Rds(on) Test Voltage
10V
Power Dissipation
1.04kW
Product Range
-
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.049ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03
Product traceability