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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP510DL-7
Order Code3127371RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id180mA
Drain Source On State Resistance10ohm
On Resistance Rds(on)10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd310mW
Power Dissipation310mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMP510DL-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is -50V at TA = +25°C
- Gate-source voltage is ±30V at TA = +25°C
- Continuous drain current is -180A at TA = +25°C, steady state, VGS = -5V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -1.2A at TA = +25°C
- Total power dissipation is 310mW at TA = +25°C
- Static drain-source on-resistance is 10 ohm max at VGS = -5V, ID = -0.1A, TA = +25°C
- SOT23 (standard) case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
10ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Power Dissipation Pd
310mW
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
180mA
On Resistance Rds(on)
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
310mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00185
Product traceability