Print Page
SKM50GB12T4
IGBT Module, Half Bridge, 81 A, 1.85 V, 175 °C, SEMITRANS 2
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Notify me when back in stock
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 62.900 |
| 5+ | € 59.290 |
| 10+ | € 55.440 |
| 50+ | € 53.430 |
Price for:Each
Minimum: 1
Multiple: 1
€ 62.90 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM50GB12T4
Order Code2301737
Technical Datasheet
Transistor PolarityDual NPN
IGBT ConfigurationHalf Bridge
Continuous Collector Current81A
DC Collector Current81A
Collector Emitter Saturation Voltage1.85V
Collector Emitter Saturation Voltage Vce(on)1.85V
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max175°C
Junction Temperature Tj Max175°C
Transistor Case StyleSEMITRANS 2
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 4 Fast [Trench]
Transistor MountingPanel
Product Range-
Product Overview
The SKM50GB12T4 is a SEMITRANS® 2 fast IGBT Module for use with AC inverter drives and UPS. It features insulated copper base plate using DBC technology (Direct Bonded Copper) and increased power cycling capability.
- Half-bridge switch
- IGBT4 = 4th generation medium fast Trench IGBT (Infineon)
- CAL4 = Soft switching 4th generation CAL-diode
- Integrated gate resistor
- For higher switching frequencies up to 12kHz
- UL recognized, file number E63532
Applications
Power Management, Maintenance & Repair
Technical Specifications
Transistor Polarity
Dual NPN
Continuous Collector Current
81A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature Tj Max
175°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
IGBT Configuration
Half Bridge
DC Collector Current
81A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation
-
Operating Temperature Max
175°C
Transistor Case Style
SEMITRANS 2
IGBT Termination
Stud
IGBT Technology
IGBT 4 Fast [Trench]
Product Range
-
Technical Docs (2)
Alternatives for SKM50GB12T4
4 Products Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Tariff No:84733020
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.18
Product traceability