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NTMS4816NR2G.
Power MOSFET, N Channel, 30 V, 11 A, 0.0082 ohm, SOIC, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMS4816NR2G.
Order Code2845385
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11A
Drain Source On State Resistance0.0082ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.04W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (19-Jan-2021)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.04W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0082ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability