TUSB2046BVF - 

Interfaz USB, Hub, USB 1.1, 3 V, 3.6 V, LQFP, 32 Pines


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Referencia del fabricante:
Código Farnell:
Hoja de datos técnicos:
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Información del producto

4 Puertos
USB 1.1
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Resumen del producto

The TUSB2046BVF is a 4-port Full-Speed Universal Serial Bus Hub that provides one upstream port and four downstream ports in compliance with the Universal Serial Bus (USB) specification as a full-speed hub. Because this device is implemented with a digital state machine instead of a microcontroller, no firmware programming is required. Fully compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support full-speed and low-speed devices by automatically setting the slew rate according to the speed of the device attached to the ports. The configuration of the BUSPWR pin selects either the bus-powered or the self-powered mode. The TUSB2046B provides the flexibility of using a 6 or a 48MHz clock. The logic level of the TSTMODE terminal controls the selection of the clock source.
  • Integrated USB transceivers
  • 3.3V Low power ASIC logic
  • One upstream port and 4 downstream ports
  • Two power source modes (self-powered mode, bus-powered mode)
  • All downstream ports support full-speed and low-speed operations
  • Power switching and over-current reporting is provided ganged or per port
  • Supports suspend and resume operations
  • Suspend status pin available for external logic power down
  • 3-state EEPROM interface allows EEPROM sharing
  • Push-pull outputs for PWRON eliminate the need for external pull-up resistors
  • Noise filtering on OVRCUR provides immunity to voltage spikes
  • Supports low EMI emission achieved by a 6MHz crystal input
  • No special driver requirements
  • Supports 6MHz operation through a crystal input or a 48MHz input clock
  • Green product and no Sb/Br


Computers & Computer Peripherals, Electrónica de Consumo


This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.


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