Low

TPS5410D - 

Regulador Reductor de Conmutación DC-DC, Ajustable, 5.5V-36Vin, 1.22V-31Vout, 1Aout, SOIC-8

TEXAS INSTRUMENTS TPS5410D

La imagen solo tiene fines ilustrativos. Consulte la descripción del producto.

Referencia del fabricante:
TPS5410D
Código Farnell:
1470471
Hoja de datos técnicos:
(EN)
Vea todos los documentos técnicos

Información del producto

:
1A
:
-
:
Buck (Paso Bajo)
:
500kHz
:
36V
:
125°C
:
31V
:
1Salidas
:
SOIC
:
Cinta Cortada
:
1.22V
:
8Pines
:
-
:
5.5V
Encontrar productos similares Seleccione y modifique los atributos anteriores para encontrar productos similares.

Resumen del producto

The TPS5410D is a 1A 500kHz Step-down Converter that integrates a low-resistance, high-side, N-channel MOSFET. Included on the substrate with the listed features is a high performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions, an under-voltage-lockout circuit to prevent start-up until the input voltage reaches 5.5V, an internally set slow-start circuit to limit inrush currents and a voltage feed-forward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 18µA typically. Other features include an active high enable, over-current limiting, overvoltage protection and thermal shutdown. To reduce design complexity and external component count, the TPS5410 feedback loop is internally compensated.
  • Up to 1A continuous (1.2A peak) output current
  • High efficiency up to 95% enabled by 110mR integrated MOSFET switch
  • Wide output voltage range (adjustable down to 1.22V with 1.5% initial accuracy)
  • Internal compensation minimizes external parts count
  • Improved line regulation and transient response by input voltage feed-forward
  • System protected by over-current limiting, overvoltage protection and thermal shutdown
  • Green product and no Sb/Br

Aplicaciones

Electrónica de Consumo, Multimedia, Industrial, Audio, Automoción, Administración de Potencia

Advertencias

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Alternativas

Comparar los productos seleccionados
Referencia del fabricante
Código Farnell
Fabricante / Descripción
Disp
Precio para
Cantidad

Productos asociados

Comparar los productos seleccionados