Low

SN65176BP - 

Transceptor, 4.75 V a 5.25 V, DIP-8

TEXAS INSTRUMENTS SN65176BP

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Referencia del fabricante:
SN65176BP
Código Farnell:
1755024
Hoja de datos técnicos:
(EN)
Vea todos los documentos técnicos

Información del producto

:
-
:
-
:
-
:
-40°C
:
DIP
:
105°C
:
-
:
4.75V
:
Individual
:
5.25V
:
Transceptor
:
8Pines
:
-
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Resumen del producto

The SN65176BP is a Differential Bus Transceiver designed for bidirectional data communication on multipoint bus transmission lines. It is designed for balanced transmission lines and meets ANSI standards TIA/EIA-422-B and TIA/EIA-485-A and ITU recommendations V.11 and X.27. The SN65176B device combines a 3-state differential line driver and a differential input line receiver, both of which operate from a single 5V power supply. The driver and receiver have active-high and active-low enables, respectively, that can be connected together externally to function as a direction control. The driver differential outputs and the receiver differential inputs are connected internally to form differential input/output (I/O) bus ports that are designed to offer minimum loading to the bus when the driver is disabled or VCC=0. This port features wide positive and negative common-mode voltage ranges, making the device suitable for party-line applications.
  • 3-state driver and receiver outputs
  • Individual driver and receiver enables
  • Wide positive and negative input/output bus voltage ranges
  • Thermal shutdown protection
  • Driver positive and negative current limiting
  • Designed for multipoint transmission on long bus lines in noisy environments
  • Operate from single 5V supply
  • ±60mA Maximum driver output capability
  • 12kR Minimum receiver input impedance
  • ±200mV Receiver input sensitivity
  • 50mV Typical receiver input hysteresis
  • 150°C Operating virtual junction temperature

Aplicaciones

Instrumentación y Medida, Control de Motor, Test y Medida, Inalámbrico, Industrial

Advertencias

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Productos asociados