Low

DRV8301DCA - 

Controlador de Motor, Three Phase DC Brushless, 8V to 60V supply, 1.7 A/1 Output, HTSSOP-56

TEXAS INSTRUMENTS DRV8301DCA

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Referencia del fabricante:
DRV8301DCA
Código Farnell:
2057084
Hoja de datos técnicos:
(EN)
Vea todos los documentos técnicos

Información del producto

:
1.7A
:
-
:
-
:
-40°C
:
125°C
:
1Salidas
:
Trifásico Sin Escobillas DC
:
8V
:
Individual
:
60V
:
56Pines
:
HTSSOP
:
-
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Resumen del producto

The DRV8301DCA is a Gate Driver Integrated Circuit for three-phase motor drive applications. The device provides three half-bridge drivers, each capable of driving two N-channel MOSFETs. The DRV8301 supports up to 1.7A source and 2.3A peak current capability. The IC can operate off of a single power supply with a wide range from 6V to 60V. The device uses bootstrap gate driver architecture with trickle charge circuitry to support 100% duty cycle. The IC uses automatic handshaking when the high-side or low-side MOSFET is switching to prevent flow of current. Integrated VDS sensing of the high-side and low-side MOSFETs is used to protect the external power stage against over-current conditions. This IC includes two current shunt amplifiers for accurate current measurement and also includes an integrated switching mode buck converter with adjustable output and switching frequency. The amplifiers support bidirectional current sensing and provide an adjustable output offset up to 3V.
  • Slew rate control for EMI reduction
  • Bootstrap gate driver with 100% duty cycle support
  • 6 or 3PWM Input modes
  • Dual integrated current shunt amplifiers with adjustable gain and offset
  • Programmable dead time control programmable
  • Over-current protection
  • PVDD and GVDD Under-voltage lockout
  • GVDD Overvoltage lockout
  • Over-temperature warning/shutdown
  • Green product and no Sb/Br

Aplicaciones

Automatización y Control de Procesos, Industrial, Control de Motor

Advertencias

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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