SPANSION  S29GL064N90TFI010  Memoria Flash, 64 Mbit, 8M x 8bit / 4M x 16bit, CFI, TSOP, 56 Pines

Technical Data Sheet (3.02MB) EN Vea todos los documentos técnicos

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Resumen del producto

The S29GL064N90TFI010 is a 64MB page mode Flash Memory featuring 110nm MirrorBit process technology. This device organized as 4194304 words or 8388608 bytes. Depending on the model nuMBer, the device has 16-bit wide data bus only or a 16-bit wide data bus that can also function as a 8-bit wide data bus by using the byte# input. The device can be programmed either in the host system or in standard EPROM programmers. It requires only a single 3V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program feature provides shorter programming times through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply flash standard. Write cycles also internally latch addresses and data needed for the programming and erase operations.
  • Uniform sector, WP#/ACC = VIL protects highest addressed sector
  • Single power supply operation
  • Secured silicon sector region
  • Programmed and locked at the factory or by the customer
  • Flexible sector architecture
  • Enhanced Versatile I/O™ control
  • Compatibility with JEDEC standards
  • 100000 Erase cycles typical per sector
  • 20 Years data retention typical
  • Advanced sector protection - Offers persistent sector protection and password sector protection
  • Program suspend & resume - Read other sectors before programming operation is completed
  • Erase suspend & resume - Read/program other sectors before an erase operation is completed
  • Data# polling & toggle bits provide status
  • CFI compliant - Allows host system to identify and accommodate multiple flash devices
  • Unlock bypass program command - Reduces overall multiple-word programming time
  • Ready/busy# output (RY/BY#) detects program or erase cycle completion
  • Hardware reset input (RESET#) resets device

Información del producto

Tamaño de la Memoria:
Configuración Memoria Flash:
8M x 8bit / 4M x 16bit
Frecuencia de Reloj:
Tipo de Interfaz IC:
Memoria, Tipo:
Núm. de Contactos Macho:
Tiempo de Acceso:
Tensión de Alimentación Mín.:
Tensión de Alimentación Máx.:
Temperatura de Trabajo Mín.:
Temperatura de Trabajo Máx.:
Rango de Producto:
3V Parallel NOR Flash Memories
Sustancia Extremadamente Preocupante (SVHC):
No SVHC (17-Dec-2015)
Nivel de Sensibilidad a la Humedad (MSL):
MSL 3 - 168 horas

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Legislación y medioambiente

País de origen:

País donde se realizó la mayor parte del proceso de producción

Conforme a RoHS:
N.º de tarifa
Peso (kg):