Low

IPD65R190C7ATMA1 - 

MOSFET de Potencia, Canal N, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

INFINEON IPD65R190C7ATMA1

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Referencia del fabricante:
IPD65R190C7ATMA1
Código Farnell:
2420492
También conocido como:
IPD65R190C7 , SP000928648
Hoja de datos técnicos:
(EN)
Vea todos los documentos técnicos

Información del producto

:
72W
:
3.5V
:
TO-252
:
650V
:
10V
:
150°C
:
0.168ohm
:
13A
:
Canal N
:
3Pines
:
-
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Resumen del producto

The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge
  • Space-saving through reduction of parts
  • Improved safety margin
  • Lowest conduction losses
  • Low switching losses
  • Better light load efficiency
  • Increasing power density

Aplicaciones

Comunicaciones y Red, Computers & Computer Peripherals, Energía Alternativa

También conocido como

IPD65R190C7 , SP000928648