Low

MB85R1001ANC-GE1 - 

NVRAM, FRAM, 1 Mbit, 128K x 8bit, Paralelo, 100 ns, TSOP

FUJITSU MB85R1001ANC-GE1

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Fabricante:
FUJITSU FUJITSU
Referencia del fabricante:
MB85R1001ANC-GE1
Código Farnell:
2070264
Hoja de datos técnicos:
(EN)
Vea todos los documentos técnicos

Información del producto

:
TSOP
:
-40°C
:
128K x 8bit
:
1Mbit
:
85°C
:
FRAM
:
100ns
:
3V
:
Individual
:
3.6V
:
48Pines
:
-
:
Paralelo
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Resumen del producto

The MB85R1001ANC-GE1 is a 1MB Ferroelectric Random Access Memory (FRAM) chip consisting of 131072 words x 8-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
  • Operating power supply voltage - 3 to 3.6V
  • Data retention - 10 years
  • Input rising/falling time - 5ns
  • Input/output evaluation level - 2/0.8V
  • Output impedance - 50pF

Aplicaciones

Computers & Computer Peripherals, Industrial